论文部分内容阅读
引言在金属—氧化物—半导体(以下简称“MOS”)器件中,作为栅绝缘层的介质薄膜是器件的主要部分,器件的工作和特性对其性能很敏感。因此在MOS工艺中着重于这层氧化物的制备。对于多数非临界使用的情况下,通常商用硅作栅氧化物的MOS器件及集成电路还是适用的。其工艺过程现已能较好地控制,并已相当地简化了。更多良好的试验结果也已获得,因此给低成本MOS电路的大规模集成电路(LSI)未来发展提供了保证。然而,对于某些较苛刻的要求,就遇到了两个可靠性方面的问题:(1)极微量的杂质在该薄膜中的迁移,特别
Introduction In metal-oxide-semiconductor (hereinafter referred to as “MOS”) devices, the dielectric thin film as a gate insulating layer is the main part of the device whose operation and characteristics are sensitive to its performance. Therefore, MOS technology in the focus on the preparation of this layer of oxide. For most noncritical applications, MOS devices commonly used for gate oxide of commercial silicon and integrated circuits are still suitable. The process is now well controlled and has been considerably simplified. More good test results have also been obtained, thus providing a guarantee for the future development of large scale integrated circuits (LSIs) for low-cost MOS circuits. However, for some of the more demanding requirements, two reliability issues have been encountered: (1) the migration of a very small amount of impurities in the film, in particular