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一、引言随着光纤通信技术的发展,处于1—1.6μm波长范围的半导体InGaAsP/InP双异质结(DH)激光器越来越受到人们的重视,因为在这个波段,石英玻璃光纤在1.3μm和1.55μm有较小的损耗窗口和色散。异质P—N结是半导体激光器的主要结构,而V—I特性是表征P—N结的基本特性之一。影响P—N结特性的因素较多,如材料组分,掺杂浓度、晶体完整性等。本文着重研究了1.3μm、1.55μmInGaAsP/InP DHLD的V—I特性与材料组分、掺杂浓度的关系,并对测量结果进行分析讨论。
I. INTRODUCTION With the development of optical fiber communication technology, semiconductor InGaAsP / InP double heterostructure (DH) lasers in the wavelength range of 1-1.6μm have drawn more and more attention because in this wave band, And 1.55μm have a smaller loss window and dispersion. Heterogeneous P-N junction is the main structure of the semiconductor laser, and V-I characteristic is one of the basic characteristics of the P-N junction characterization. There are many factors that affect the characteristics of P-N junction, such as material composition, doping concentration, crystal integrity and so on. This paper focuses on the relationship between the V-I characteristics of 1.3μm, 1.55μm InGaAsP / InP DHLDs and the material composition and doping concentration, and analyzes the measurement results.