借助深能级瞬态傅里叶谱研究了钒离子注入在SiC中引入的深能级陷阱.掺入的钒在4 H-SiC中形成两个深受主能级,分别位于导带下0.81和1.02eV处,其电子俘获截面分别为7.0×10-16和6.0×10-16cm2.对钒离子注入4 H-SiC样品进行低温光致发光测量,同样发现两个电子陷阱,分别位于导带下0.80和1.16eV处。结果表明,在n型4 H-SiC掺入杂质钒可以同时形成两个深的钒受主能级,分别位于导带下0.8±0.01和1.1±0.08eV处. The deep level trap induced by vanadium ion implantation in SiC was investigated by deep level transient Fourier spectroscopy. The doped vanadium formed two deep acceptor levels in 4 H-SiC, located at 0.81 And 1.02eV, the electron capture cross sections were 7.0 × 10-16 and 6.0 × 10-16cm2, respectively. For the low-temperature photoluminescence measurement of vanadium ion-implanted 4 H-SiC samples, two electron traps were also found, Down at 0.80 and 1.16eV. The results show that vanadium doped into n-type 4 H-SiC can form two deep vanadium acceptor levels, which are 0.8 ± 0.01 and 1.1 ± 0.08eV below the conduction band respectively.