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卫星在轨飞行期间,星载电子器件将不可避免地遭受空间带电粒子的辐射,随着半导体技术的不断进步,电子器件的单粒子效应敏感性越来越高,已经成为一个影响其可靠性的重要因素。互补金属氧化物半导体(Complementary Metal Oxide Semiconductor Active Pixel Sensor,CMOS APS)光电器件因其低功耗、小体积和微重量的优点已成为遥感卫星成像的重要发展方向。为获取CMOS APS光电器件在遭受带电粒子辐射后性能变化的特征,在分析SOI MOSFET(Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistor)结构和特性的基础上,通过理论分析和数值模拟,分析了重离子在CMOS APS光电器件中引起的辐射损伤,分析晶体管和光电二极管的电荷收集机理。通过TCAD(Technology Computer Aided Design)模拟了电荷收集过程,分析了影响漏电流变化的直接因素,获得了重离子LET(Linear Energy Transition)值、入射位置以及器件偏置电压与漏电流的相互关系,为后续CMOS APS的重离子模拟试验以及抗辐射加固设计提供了理论支撑。
During on-orbit of satellites, spaceborne electronic devices will inevitably suffer from the radiation of space-charged particles. With the continuous improvement of semiconductor technology, the single-particle effect sensitivity of electronic devices is becoming more and more high, which has become an issue that affects their reliability Key factor. Complementary Metal Oxide Semiconductor Active Pixel Sensor (CMOS APS) optoelectronic devices have become an important development direction of remote sensing satellite imaging because of their low power consumption, small size and micro weight. In order to obtain the characteristics of the CMOS APS optoelectronic devices after being subjected to charged particle radiation, based on the analysis of the structure and characteristics of the SOI MOSFET (Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistor), theoretical analysis and numerical simulation The radiation damage caused by heavy ions in CMOS APS optoelectronic devices was analyzed, and the charge collection mechanism of transistors and photodiodes was analyzed. The process of charge collection was simulated by TCAD (Technology Computer Aided Design). The direct factors affecting the change of leakage current were analyzed. The relationship between LET (Linear Energy Transition) value, incident position, device bias voltage and leakage current was obtained. It provides a theoretical support for the subsequent heavy ion simulation experiments of CMOS APS and the design of anti-radiation reinforcement.