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我们提出GaAsMESFET小信号电容的一种新的分析模型。由于考虑了非均匀掺杂分布的影响,故此模型可以用于外延生长的FET以及离子注入的FET。我们还考虑了背栅、覆盖层、导电沟道的速度饱和以及栅下漏一侧沟道中可能形成的耿畴。模型解释了GaAs微波FET的栅-源和栅-漏电容的电压依赖关系,而且与实验结果符合很好。这个分析模型很适于GaAs微波FET和集成电路的计算机辅助设计。
We propose a new analytical model of GaAsMESFET small signal capacitance. Due to the influence of the non-uniform doping distribution, the model can be used for epitaxial FETs and ion-implanted FETs. We also consider the back gate, the overburden, the speed of the conductive channel, and the possible formation of the channel in the drain side of the gate. The model explains the voltage dependence of the gate-source and gate-drain capacitances of GaAs microwave FETs, and is in good agreement with the experimental results. This analytical model is well suited for computer-aided design of GaAs microwave FETs and integrated circuits.