研究了p-GaN层厚度对GaN基pin结构紫外探测器性能的影响.模拟计算表明:较厚的p-GaN层会减小器件的量子效率,然而同时也会减小器件的暗电流,较薄的p-GaN层会增加器件的量子效率,但是同时也增加了器件的暗电流.进一步的分析表明,金属和p-GaN之间的结电场是出现这种现象的根本原因.在实际的器件设计中,应该根据实际需要选择p型层的厚度. The effect of p-GaN layer thickness on the performance of GaN-based pin-type UV detector was investigated. The simulation results show that thicker p-GaN layer can reduce the quantum efficiency of the device, while reducing the dark current of the device. The thin p-GaN layer increases the quantum efficiency of the device but at the same time increases the dark current of the device. Further analysis shows that the junction field between metal and p-GaN is the root cause of this phenomenon. Device design, should be based on the actual need to choose the thickness of the p-type layer.