This paper presents new neutron-induced single event upset (SEU) data on the SRAM devices with the technology nodes from 40 nm to 500 nm due to spallation,react
Using first-principle calculations,we investigate the mechanical,structural,and electronic properties and formation energy of 25 kinds of Ⅲ-Ⅴ binary monolayer
Heterostructures (HSs) have attracted significant attention because of their interlayer van der Waals interactions.The electronic structures and optical propert
Recently,a contact-resistance-measurement method was developed to detect the minigap,hence the Andreev bound states (ABSs),in Josephson junctions constructed on