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在不同衬底温度下用脉冲激光沉积法(PLD)分别在n-Si(111)、蓝宝石(001)和非晶石英衬底上生长了ZnO薄膜。首先对薄膜进行了X射线衍射(XRD)分析,找出在三种不同衬底上制得的结晶质量最好的ZnO薄膜所对应的最佳衬底温度。然后对最佳衬底温度下得到的ZnO薄膜分别进行了X射线衍射(XRD)、光致发光谱(PL)和原子力显微镜(AFM)分析。结果表明,在硅衬底上生长的ZnO薄膜XRD谱半高宽最小,PL谱特征发光峰强度最强,AFM下的平均粒径最大,说明硅衬底上生长的ZnO薄膜结晶质量最好,而在石英衬底上生长的ZnO薄膜结晶质量最差。
ZnO thin films were grown on n-Si (111), sapphire (001) and amorphous quartz substrates by pulsed laser deposition (PLD) at different substrate temperatures. The film was first analyzed by X-ray diffraction (XRD) to find the best substrate temperature for the best-quality ZnO films prepared on three different substrates. The ZnO films obtained at the optimum substrate temperature were analyzed by X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM). The results show that the XRD spectrum of the ZnO thin films grown on the silicon substrate has the smallest FWHM, the strongest PL peak intensity and the largest average particle size under the AFM, which shows that the ZnO thin films grown on the silicon substrate have the best crystal quality, The ZnO thin films grown on quartz substrates have the poorest crystalline quality.