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使半导体衬底的表面温度保持在550°至850℃,将由硅烷(SiH_4)、联氨(N_2H_4)和携带气体混合组成的反应气体作用在该加热表面,因而在半导体衬底表面淀积氮化硅膜的一种方法。本专利为此方法确定了以下条件,即:反应管内半导体衬底的温度;反应管内硅烷同联氨各自的浓度以及他们之间的比;从而工业上能在所述的衬底上淀积氮化硅薄膜。
The surface temperature of the semiconductor substrate is kept at 550 ° to 850 ° C and a reaction gas consisting of a mixture of silane (SiH 4), hydrazine (N 2 H 4) and a carrier gas is applied to the heating surface to deposit a nitride on the surface of the semiconductor substrate A method of silicon film. This patent establishes the following conditions for this method: the temperature of the semiconductor substrate in the reaction tube; the respective concentrations of silane and hydrazine in the reaction tube and the ratio between them; thereby industrially depositing nitrogen on said substrate Silicon film.