论文部分内容阅读
本文提出了采用B样条函数模拟MOS器件直流特性的新方法。基于“张量积”原理和重结点技巧,推导出满足MOS器件边界约束条件的三维二次B样条函数最小二乘法的数学模型,并开发了相应的 SMDC程序(Simulation for MOS DC Characteristics). 该程序对沟道长度分别为 8、5、3和 0.39μm的MOS器件直流特性的模拟结果表明,所有器件的计算值与测量值相符得很好,在器件的工作范围内,全部数据的平均相对误差只有2％左右.在IBM370/148机器上运行SMDC程序时,计算一个I_(DS)数据的CPU时间为0.1秒. 与集成电路通用模拟程序SPICE中的MOS解析模型相比较,SMDC程序在模拟短沟道MOS器件、尤其是沟道长度小于1μm的亚微米器件的直流特性的精度方面,具有明显的优越性.
This paper presents a new method to simulate the DC characteristics of MOS devices using B-spline functions. Based on the theory of “tensor product” and the technique of “reconnection point”, a mathematical model of least square method of three-dimensional quadratic B-spline function that satisfies the boundary condition of MOS device is deduced. The corresponding SMDC program (Simulation for MOS DC Characteristics) . The simulation of the DC characteristics of MOS devices with channel lengths of 8, 5, 3 and 0.39 μm, respectively, shows that the calculated and measured values of all the devices agree very well. Within the operating range of the device, The average relative error is only about 2% .When running the SMDC program on an IBM 370/148 machine, the CPU time for calculating one I DS data is 0.1 second.Compared with the MOS analytical model in the integrated circuit simulation program SPICE, the SMDC program There is a clear advantage in simulating the accuracy of the DC characteristics of short channel MOS devices, especially submicron devices with channel lengths of less than 1 μm.