论文部分内容阅读
近十几年来,人们愈来愈重视对Si-SiO_2界面的研究,提出了许多测定界面特性和结构的方法。其中,高频和准稳态C-V技术是研究界面特性最有效的方法,已广泛地被人们所采用。例如,用脉冲C-V技术研究MOS电容的瞬时效应:用这个技术研究Ge-SiO_2结构的C-V特性;以及用它研究临近半导体表面的杂质分布,最近G.D.Kaplan以及G.Kaplan报导了用脉冲C-V技术测定Si-SiO_2界面态,具有比高频和准稳态C-V技术更多的优越性。
In recent ten years, people pay more and more attention to the study of Si-SiO 2 interface, and put forward many methods to measure interface characteristics and structure. Among them, high-frequency and quasi-steady-state C-V technology is the most effective way to study the interface characteristics and has been widely adopted by people. For example, pulsed-CV techniques are used to study the transient effects of MOS capacitors: the CV characteristics of Ge-SiO 2 structures are studied using this technique; and the distribution of impurities near the semiconductor surface is investigated using this technique. Recently, GD Kaplan and G. Kaplan reported that pulsed CV measurements The Si-SiO 2 interface state has more advantages than high-frequency and quasi-steady-state CV technology.