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由于具有低成本、无毒、铜源丰富等优点,以及在气敏传感器、太阳能电池、光催化等领域的潜在应用前景,Cu_2O薄膜引起了人们的广泛关注.采用射频平衡磁控溅射镀膜系统,在薄膜沉积过程中通过施加不同衬底负偏压可控制备了Cu_2O多孔纳米结构薄膜.研究发现,所得Cu_2O薄膜具有灵活可调的孔隙度和纳米构筑单元形貌特征,并且它们与衬底负偏压的大小密切相关;薄膜沿衬底法线方向呈柱状生长且具有显著的(111)择优取向;禁带宽度在2.0~2.35 eV之间可调.很明显地,传统的溅射离子轰击、再溅射理论并不适合用来解释上述负偏压效应,因此在此基础上提出了一种负偏置沉积过程中材料原子或分子在薄膜表面选择性优先沉积机制.
Due to its low cost, nontoxicity, rich source of copper, and potential applications in gas sensors, solar cells, photocatalysis and other fields, Cu 2 O films have attracted people’s attention.Using RF balance magnetron sputtering coating system , The Cu 2 O porous nanostructured thin films can be controlled by applying negative bias of different substrates during the film deposition process.The results show that the obtained Cu 2 O thin films have the features of flexible and adjustable porosity and morphology of nano- The size of the negative bias is closely related to each other. The film grows in a columnar shape along the normal direction of the substrate and has a predominant (111) preferred orientation. The bandgap width is adjustable between 2.0 and 2.35 eV. It is clear that conventional sputter ions The bombardment and re-sputtering theories are not suitable for explaining the negative bias effect. Therefore, a selective preferential deposition mechanism of material atoms or molecules on the surface of the film during the negative bias deposition is proposed.