据日本电报电话公用公司报道,由该公司设计,经Anelva公司制造的硅分子束外延设备能大量生产4英寸的硅外延片。生产一片外延片需20分钟,最高的生长速率为20(?)/s。硅片沉积室50cm~3。硅片可以旋转,整个片子上的厚度均匀性变化<±5％。掺杂剂为锑,掺杂均匀度变化<±10％。均匀度的变化反应整个硅片上温度变化±5℃。加 According to a report by Nihon Telegraph and Telephone Utilities, the silicon molecular beam epitaxy equipment, designed by the company and manufactured by Anelva, can mass-produce 4-inch silicon epitaxial wafers. Epitaxial wafer production takes 20 minutes, the highest growth rate of 20 (?) / S. Wafer deposition chamber 50cm ~ 3. The wafer can be rotated and the thickness uniformity across the film changes by <± 5%. Dopant antimony, doping uniformity changes <± 10%. Changes in uniformity reflect temperature changes across the wafer ± 5 ° C. plus