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本文报道了半导体InP上Al膜阳极氧化的研究,并用AES,V-V,DLTS和椭圆仪等测试方法研究了氧化膜的稳定性、电学特性、组分的纵向分布以及Al_2O_3/InP的界面特性,研究结果表明,阳极氧化Al_2O_3的介电常数为11~12,Al_2O_3/InP界面存在一个能量上连续分布的电子陷阱,DLTS峰值对应的能级位置约在E_c-E_c=0.5eV,其俘获截面约为10~(-15)cm~2,Al_2O_3/InP的界面态密度为10~(11)cm~(-2)eV~(-1)。阳极氧化Al_2O_3的稳定性要比InP自身氧化物好得多,更适于用作器件的钝化保护和扩散掩蔽膜。
In this paper, the anodic oxidation of Al films on InP semiconductors has been reported. The stability, electrical properties, longitudinal distribution of the oxide films and interface properties of Al 2 O 3 / InP films have been investigated by AES, VV, DLTS and ellipsometry methods. The results show that the dielectric constant of anodized Al 2 O 3 is 11-12, and there is an electronically trapped electron trap at the interface of Al 2 O 3 / InP. The corresponding energy level of DLTS peak is about E_c-E_c = 0.5eV with a capture cross section of about 10 ~ (-15) cm ~ 2 and the interface state density of Al_2O_3 / InP is 10 ~ (11) cm ~ (-2) eV ~ (-1). Anodized Al 2 O 3 is much more stable than InP itself and is more suitable as a passivation and diffusion mask for devices.