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本文论述一项迄今未见文献报道的试验。作者将能量在20KeV以下的电子束退火试用于非离子注入的硅低频大功率晶体管和高频小功率晶体管,发现这种低能电子束辐照在某种条件下可以大幅度地降低晶体管的电流放大系数,而在另一种条件下又可以提高晶体管的电流放大系数。不但对浅结晶体管,而且对深结晶体管都有这种效应。研究了放大系数的变化与电子束辐照各工作参数的关系。实验证明:电子束流下降的速率对放大系数降低的幅度有显著的影响。电子束辐照引起电流放大系数下降的同时晶体管的击穿电压BV_(ebo)和BV_(cbo)并不降低,BV_(ceo)还有所提高。在晶体管制造工序中加入电子束辐照,降低了大功率晶体管“云雾”击穿的发生率,提高了产品的合格率。
This article discusses a hitherto unrecognized experiment. The author electron beam annealing energy below 20KeV trial of non-ion implanted silicon low-frequency high-power transistors and high-frequency low-power transistors found that under certain conditions, the low-level electron beam irradiation can greatly reduce the transistor current amplification Coefficient, but in another condition can improve the current amplification factor of the transistor. Not only shallow transistor, but also for deep junction transistors have this effect. The relationship between the variation of amplification factor and each working parameter of electron beam irradiation was studied. Experiments show that the decay rate of electron beam has a significant effect on the amplitude of the amplification factor. The electron beam irradiation causes the current amplification factor to decrease while the breakdown voltage BV ebo and BV cbo of the transistor do not decrease, and the BV ceo is improved. In the transistor manufacturing process by adding electron beam irradiation, reducing the high-power transistor “cloud” breakdown rate and improve the product pass rate.