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采用VHF-PECVD技术沉积微晶硅薄膜,获得较高的生长速度,但是薄膜质量较差,这与初始生长过程中生成厚的非晶孵化层关系密切。本研究表明,孵化层的厚度与硅烷浓度、功率密切相关:低的硅烷浓度,能保证成膜过程中氢原子打破弱键的几率,逐层生长现象明显;大的馈入功率,能保证更多氢原子参与成膜反应,减少悬键缺陷。这两方面的优化,最终把孵化层降低到26.55 nm。
The deposition of microcrystalline silicon thin films by VHF-PECVD technique attained high growth rate, but the film quality was poor, which was closely related to the formation of thick amorphous layer during the initial growth. This study shows that the thickness of the hatching layer is closely related to the concentration of silane and the power. The low concentration of silane can ensure the probability of hydrogen atoms breaking weak bonds during film formation, and the layer-by-layer growth phenomenon is obvious. The large feeding power ensures more Hydrogen atoms involved in the formation of film reaction, reducing dangling defects. These two aspects of optimization eventually reduced the incubation layer to 26.55 nm.