电荷耦合器件(CCD)是1970年在MOS工艺基础上发展起来的新型半导体器件。它和戽链器件(BBD)等一起,通常统称为电荷转移器件(CTD)。与以前在热平衡状态下工作的双极和单极半导体器件相反,CCD是一种在非平衡状态下依靠势阱转移电荷信息的、具有独特工作机构的器件;是在硅工艺 Charge-coupled device (CCD) is a new type of semiconductor device developed on the basis of MOS technology in 1970. It and the chain of devices (BBD) together, often collectively referred to as charge transfer device (CTD). In contrast to bipolar and unipolar semiconductor devices that previously worked in thermal equilibrium, the CCD is a device with a unique operating mechanism that relies on potential traps to transfer charge information in an unbalanced state;