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通过磁控反应溅射仪制备了ＴａＮ／ＴｉＮ和ＴａＷＮ／ＴｉＮ多晶超晶格薄膜，采用Ｘ射线衍射仪（ＸＲＤ）、透射电子显微镜和显微硬度仪对超晶格薄膜的微结构和硬度进行了分析结果表明，ＴａＮ／ＴｉＮ和ＴａＷＮ／ＴｉＮ二超晶格体系中各组成材料的晶体结构均为面心立方，呈多晶外延生长模式，从而形成共格界面，产生协调应变ＴａＮ／ＴｉＮ和ＴａＷＮ／ＴｉＮ超晶格薄膜都存在超硬效应，分别在调制周期９．０和５．６ｎｍ时取得相应的最大硬度值ＨＫ＝４０．０和５０．０ＧＰａ．研究认为不同的晶格错配度影响薄膜的硬度以及硬度峰值的位置，界面协调应变所引起的交变应力场阻碍位错的运动是导致硬度异常的主要原因
The TaN / TiN and TaWN / TiN polycrystalline superlattice films were prepared by magnetron sputtering. The microstructure and hardness of the superlattice thin films were characterized by X-ray diffraction (XRD), transmission electron microscopy and microhardness tester The analysis results show that the crystal structure of each material in TaN / TiN and TaWN / TiN superlattice system is face-centered cubic and polycrystalline epitaxial growth mode, so as to form a coherent interface, resulting in coordinated strain TaN / TiN And TaWN / TiN superlattice films all have superhardness effects, and the corresponding maximum hardness values HK = 40.0 and 50.0 GPa were achieved respectively at modulation periods of 9.0 and 5.6 nm. It is considered that the different lattice mismatch affects the film hardness and peak position, and the alternating stress field caused by interfacial coordination strain hinders the motion of dislocation which is the main reason of the abnormal hardness