在SiO_2/Si_3N_4/SiO_2/Si多层绝缘材料的俄歇分析中往往给出一个错误结果,即在SiO_2/Si界面处产生一厚度为数nm的附加富氮层。研究结果表明,该层的产生是由电子束和离子束辐照引入。减少电子束流密度会使这一附加层厚度减少甚至完全消失。最后,对这一电子束和离子束效应引起氮界面堆积的产生和消除进行了讨论。 Auger’s analysis of SiO 2 / Si 3 N 4 / SiO 2 / Si multi-layer insulating materials often gives the wrong result that an additional nitrogen-rich layer with a thickness of several nanometers is produced at the SiO 2 / Si interface. The results show that this layer is produced by electron beam and ion beam irradiation. Decreasing the beam current density will reduce or eliminate the thickness of this additional layer altogether. Finally, the generation and elimination of nitrogen interface deposition caused by this electron beam and ion beam effect are discussed.