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采用micro Raman散射、傅里叶变换红外吸收谱和光致发光谱研究了快速热退火及氢等离子体处理对等离子体增强化学气相沉积法 2 0 0℃衬底温度下生长的富硅氧化硅 (SRSO)薄膜微结构和发光的影响 .研究发现 ,在 30 0—6 0 0℃范围内退火 ,SRSO薄膜中非晶硅和SiOx∶H两相之间的相分离程度随退火温度升高趋于减小 ;而在 6 0 0—90 0℃范围内退火 ,其相分离程度随退火温度升高又趋于增大 ;同时发现SRSO薄膜发光先是随退火温度的升高显著加强 ,然后在退火温度达到和超过 6 0 0℃后迅速减弱 ;发光峰位在 30 0℃退火后蓝移 ,此后随退火温度升高逐渐红移 .对不同温度退火后的薄膜进行氢等离子体处理 ,发光强度不同程度有所增强 ,发光峰位有所移动 ,但不同温度退火样品发光增强的幅度和峰位移动的趋势不同 .分析认为退火能够引起薄膜中非晶硅颗粒尺度、颗粒表面结构状态以及氢的存在和分布等方面的变化 .结果表明不仅颗粒的尺度大小 ,而且颗粒表面的结构状态都对非晶硅颗粒能带结构和光生载流子复合机理发挥重要影响 .
The micro-Raman scattering, Fourier transform infrared absorption spectroscopy and photoluminescence spectra were used to study the effects of rapid thermal annealing and hydrogen plasma treatment on the silicon-rich silicon oxide (SRSO) grown under the plasma enhanced chemical vapor deposition ) Thin film microstructure and luminescence.It was found that the phase separation between amorphous silicon and SiOx:H phase in the SRSO thin film tends to decrease with the annealing temperature in the range of 30 0-6 0 0 ℃ While the annealing temperature in the range of 600 ~ 90 0 ℃, the degree of phase separation with the annealing temperature increases and tends to increase; the same time, the SRSO thin film luminescence first with the annealing temperature was significantly enhanced, and then reached the annealing temperature And rapidly weakened after exceeding 600 ℃. The luminescence peaks were blue-shifted after annealing at 300 ℃ and then red-shifted with the increase of annealing temperature.Hydrogen plasma treatment was carried out on the films annealed at different temperatures with different intensities But the tendency of the luminescence intensities and the peak positions of samples annealed at different temperatures is different.Analysis shows that the annealing can cause the amorphous silicon particle size, the particle surface structure It changes states and the presence and distribution of hydrogen and the like. The results show that not only scale of particle size, the surface state of the particles and the structure of the amorphous silicon particles are energy band structure and mechanism of recombination of photogenerated carriers to play an important influence.