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设计了一种基于BiCMOS工艺、结构新颖的过温保护电路。对基准电流产生机理、芯片关断温度、芯片重新开启温度、温度滞回量和电路转换速度进行理论推导,给出了电路核心器件的参数设置。仿真结果显示,电路在127℃时关断芯片,116℃时重新开启芯片,温度滞回量为11℃,电路转换速度为26.2V/℃,性能稳定、可靠。
A novel over temperature protection circuit based on BiCMOS process is designed. The theoretical derivation of the reference current generation mechanism, the chip shutdown temperature, the chip reopening temperature, the temperature hysteresis and the circuit conversion speed is given, and the parameter setting of the circuit core device is given. The simulation results show that the circuit shuts off the chip at 127 ℃ and reopens the chip at 116 ℃. The temperature hysteresis is 11 ℃, and the circuit switching speed is 26.2V / ℃. The performance is stable and reliable.