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基于AlGaN/GaN异质结场效应晶体管(HFET)中肖特基势垒高度的有效提取对提升器件的性能和稳定性有着重要指导意义,制备了AlGaN/GaN异质结肖特基二极管,并利用光电流谱测试得到了该样品的势垒高度。此外,测试得到该样品的正向变温电流电压(I-V)曲线,发现在正向变温I-V曲线中存在一个温度无关点,低于该点时同一偏压下电流随温度的升高而增大,高于该点时同一偏压下电流随温度的升高而减小。利用温度无关点对应的电压,结合薛定谔泊松方程自洽循环迭代,计算得到AlGaN/GaN肖特基二极管的势垒高度,发现该结果与光电流谱测试的结果非常一致,从而得到一种计算AlGaN/GaN异质结肖特基二极管势垒高度的新方法。
The efficient extraction of Schottky barrier height in AlGaN / GaN Heterojunction Field Effect Transistors (HFETs) plays an important guiding role in improving the performance and stability of the devices. AlGaN / GaN heterojunction Schottky diodes The potential barrier height of the sample was obtained by photocurrent spectroscopy. In addition, a positive temperature-current curve (IV) of the sample was obtained by the test. It was found that there was a temperature-independent IV curve in the forward temperature change. Below this point, the current increased with increasing temperature under the same bias voltage. Above this point the current decreases with increasing temperature at the same bias voltage. The potential barrier height of AlGaN / GaN Schottky diode was calculated by self-consistent iteration of Schrödinger Poisson equation using the voltage corresponding to the temperature-independent point. The results were in good agreement with the results of the photocurrent spectrum test, resulting in a calculation New Method for Barrier Height of AlGaN / GaN Heterojunction Schottky.