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在宽范围偏置条件下,测量了电应力前后GaAlAs红外发光二极管(IRED)的低频噪声,发现应力前后1/f噪声随偏置电流变化的规律没有改变,但应力后1/f噪声幅值比应力前增加大约100倍。基于载流子数和迁移率涨落的理论分析表明GaAlAsIRED的1/f噪声在小电流时反映体陷阱特征,大电流时反映激活区陷阱特征,1/f噪声的增加归因于电应力在器件有源区诱生的界面陷阱和表面陷阱,因而,1/f噪声可以用来探测电应力对该类器件有源区的潜在损伤。
Under a wide range of bias conditions, the low frequency noise of GaAlAs infrared light emitting diode (IRED) before and after electrical stress was measured and the law of 1 / f noise with bias current before and after stress was found to be unchanged. However, the 1 / f noise amplitude Increase about 100 times before stress. The theoretical analysis based on carrier number and mobility fluctuation shows that the 1 / f noise of GaAlAsIRED reflects body traps characteristics at low currents and the trap characteristics of active regions at high currents. The increase of 1 / f noise is attributed to the electrical stress at The interface traps and surface traps induced in the active area of the device therefore 1 / f noise can be used to detect the potential damage caused by electrical stress to the active area of such devices.