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采用改进的气相外延法在(100)GaAs衬底上外延生长了ZnSe单晶膜。最大生长速率为每小时10μm左右。淀积过程的激活能为10kcal/mol。在77K的温度下测量了外延膜的光致发光,4460A附近可以观察到很强的蓝色发射。外延膜的电阻率～1.1Ω·cm。
A ZnSe single crystal film was epitaxially grown on (100) GaAs substrate by a modified vapor phase epitaxy. The maximum growth rate is about 10μm per hour. The activation energy of the deposition process is 10 kcal / mol. The photoluminescence of the epitaxial film was measured at a temperature of 77K and a strong blue emission was observed around the 4460A. The resistivity of the epitaxial film is ~1.1 Ω · cm.