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本文系统研究了氧离子注入剂量和退火温度对含有Si-V发光中心的微晶金刚石薄膜的微结构和光电性能的影响.结果表明,氧离子注入并在较高温度退火有利于提高薄膜中Si-V中心的发光强度.当氧离子注入剂量从1014cm2增加到1015cm2时,薄膜中Si-V发光强度增强.Hall效应测试结果表明退火后薄膜的面电阻率降低.不同温度退火时,氧离子注入薄膜的Si-V发光强度较强时,薄膜的面电阻率增加,说明Si-V发光中心不利于提高薄膜的导电性能.Raman光谱测试结果表明,薄膜中缺陷数量的增多会增强Si-V的发光强度,而降低薄膜的导电性能.
In this paper, the effects of oxygen ion implantation dose and annealing temperature on the microstructures and optical properties of microcrystalline diamond films containing Si-V luminescent centers have been investigated systematically.The results show that oxygen ion implantation and annealing at higher temperatures are beneficial to improve the Si -V center.When the oxygen ion implantation dose increased from 1014cm2 to 1015cm2, the Si-V luminescence intensity of the film was enhanced.Hall effect test results showed that the surface resistivity of the film after annealing decreased.During the annealing at different temperatures, the oxygen ion implantation The Si-V luminescence intensity of the film is stronger, the surface resistivity of the film increases, indicating Si-V luminescent center is not conducive to improve the conductivity of the film.Raman spectroscopy test results show that the increase in the number of defects in the film will enhance the Si-V Luminous intensity, while reducing the conductivity of the film.