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用高频溅射法生长CoMnNi氧化物非晶薄膜并进行退火实验.对不同温度退火的样品作X射线分析及电阻测量.结果表明,CoMnNi氧化物非晶薄膜在低于550℃退火,薄膜发生结构弛豫,电阻率升高;550～750℃温区退火,薄膜结构产生晶化.随着退火温度的升高,晶化程度增强,电阻率逐步下降;高于750℃退火,薄膜开始由立方尖晶石向四方尖晶石结构转化,电阻率增大.还给出了老化实验结果.
An amorphous thin film of CoMnNi oxide was grown by high frequency sputtering and annealed.The XRD and resistance measurements of samples annealed at different temperatures were carried out.The results showed that the amorphous CoMnNi thin films annealed below 550 ℃, The structure is relaxed, the resistivity is increased, the film structure is crystallized after annealing in the temperature range of 550-750 ° C. With the increase of annealing temperature, the degree of crystallization increases and the resistivity declines gradually. When the temperature is higher than 750 ° C., The cubic spinel transformed into tetragonal spinel structure, the resistivity increased, and the aging test results were also given.