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在TFT-LCD的生产过程中,阵列金属被腐蚀是造成TFT-LCD产品缺陷(亮线、薄亮线等)的常见原因。文章对实际生产过程中阵列基板的一种典型腐蚀性缺陷,应用扫描电子显微镜(SEM)、聚焦离子束(FIB)和能谱仪(EDS)等工具,并且结合BO(Business Objects)、CIM(Computer Integrated Manufacturing)等数据统计软件进行了分析。确定了造成缺陷的原因是栅金属暴露在含氯元素的酸性气体中被腐蚀,还确定了酸性气体的泄露源,并且推断出其形成机理:腐蚀发生在栅金属刻蚀(Gate Etch)工艺和多层膜沉积(Multi-Deposition)工艺之间,随后的多层膜沉积工艺的抽真空过程促进了缺陷的进一步形成。另外,针对发生此种缺陷时的应急措施进行了探讨。
During the production of TFT-LCDs, the metal corrosion of the array is a common cause of TFT-LCD product defects (bright lines, thin bright lines, etc.). In this paper, a typical corrosive defect of the array substrate in the actual production process is analyzed by using tools such as scanning electron microscope (SEM), focused ion beam (FIB) and energy dispersive spectrometer (EDS) Computer Integrated Manufacturing) and other data statistical software were analyzed. The cause of the defects was identified as the gate metal was etched in an acid gas containing chlorine, a source of sour gas was also determined, and the formation mechanism was deduced: the etching occurred in the gate Etch process and The multi-layer deposition (Multi-Deposition) process, the subsequent multi-layer film deposition process evacuation process to promote the further formation of defects. In addition, the emergency measures in the event of such defects are discussed.