论文部分内容阅读
A single gate Ⅲ-Ⅴ junctionless tunnel field effect transistor(SG-JLTFET) has been reported which shows excellent dc characteristics at low power supply operation.This device has a thin uniformly n-type doped channel of GaSb i.e.gallium antimonide which is grown epitaxially over silicon substrate.The DC performance parameters such as I_(on),I_(on)/I_(off),average and point subthreshold slope as well as device parameters for analog applications viz.transconductance g_m,transconductance generation efficiency g_m/I_D,various capacitances and the unity gain frequency f_T are studied using a device simulator.Along with examining its endurance to short channel effects,the performances are also compared with a Silicon Dual Gate Junctionless Tunnel FET(DG-JLTFET).The DC and small signal analog performance reflects that GaSb SG-JLTFET has immense purview for extreme high-frequency and low-power applications.
A single gate III-V junctionless tunnel field effect transistor (SG-JLTFET) has been reported which shows excellent dc characteristics at low power supply operation. This device has a thin uniform n-type doped channel of GaSb iegallium antimonide which is grown epitaxially over silicon substrate. The DC performance parameters such as I on, I on / I off, average and point subthreshold slope as well as device parameters for analog applications viz. transconductance g_m, transconductance generation efficiency g_m / I_D, various capacitances and the unity gain frequency f_T are studied using a device simulator.Along with examining its endurance to short channel effects, the performances are also compared with a Silicon Dual Gate Junctionless Tunnel FET (DG-JLTFET). DC and small signal analog performance characterized that GaSb SG-JLTFET has immense purview for extreme high-frequency and low-power applications.