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采用感应熔炼和真空热压的方法制备了Sb掺杂和未掺杂的Mg2Si基热电材料。研究了Sb掺杂对Mg2Si基热电材料的结构以及热电特性的影响。结果表明:通过Sb掺杂使得载流子浓度从3.07×1019cm-3增加到1.25×1020cm-3,电子有效质量也相应增加。测试了从室温到800K下试样的Seebeck系数,电导率和热导率。结果显示,0.3at%Sb掺杂使得电导率得到显著增加,在783K时,ZT值达到0.7。
Sb-doped and undoped Mg2Si-based thermoelectric materials were prepared by induction melting and vacuum hot pressing. The effect of Sb doping on the structure and thermoelectric properties of Mg2Si-based thermoelectric materials was investigated. The results show that the effective electron mass increases with the increase of carrier concentration from 3.07 × 10 19 cm -3 to 1.25 × 10 20 cm -3 by Sb doping. The Seebeck coefficient, conductivity and thermal conductivity of the samples were tested from room temperature to 800K. The results show that 0.3at% Sb doping leads to a significant increase in conductivity, with a ZT value of 0.7 at 783K.