An improved structure of Schottky rectifier,called a trapezoid mesa trench metal-oxide semiconductor (MOS) barrier Schottky rectifier (TM-TMBS),is proposed and
Molecular beam epitaxy growth of an In_xGa_(1-x)As/GaAs quantum well(QW) structure(x equals to 0.17 or 0.3) on offcut(100) Ge substrate has been investigated.Th
We summarized the design, fabrication challenges and important technologies for multi-wavelength laser transmitting photonic integration. Technologies discussed
The fabrication and characterization of distributed feedback(DFB) quantum cascade lasers emitting atλ≈8.5μm are reported.The first-order DFB grating structur