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采用没置在MBE装置中的裸规对砷坩埚加热过程进行控制,比通常采用的坩埚恒温控制法的好处是:整个过程中分子束流密度的摆动大大减少,起伏时间缩短到1/2.2～1/3.6,相应的砷浪费最亦减少到1/10～1/45。当有铝或镓分子束同时蒸发的场合,一般会因此使砷分子束流减少,但使用本控制法能自动升温补偿该项损耗而维持分子束流的恒定。对于常规的MBE装置产品,要实施本控制法时,一般无需添加任何仪器和设备,仅将电接线略加改动就能实现。
The control of heating process of arsenic crucible with nude gauge which is not installed in MBE device has the advantage over the commonly used crucible thermostatic control method that the molecular beam density swing is greatly reduced and the undulating time is shortened to 1 / 2.2 ~ 1 / 3.6, the corresponding most of the arsenic waste reduced to 1/10 ~ 1/45. When aluminum or gallium molecular beam is evaporated at the same time, the beam of arsenic is generally reduced. However, using the present control method, the temperature can be automatically warmed to compensate for the loss and keep the molecular beam constant. For the conventional MBE device products, the implementation of this control method, generally do not need to add any instruments and equipment, only a slight change in electrical wiring can be achieved.