硅和硅介质膜的腐蚀是在硅衬底表面上形成精细图形的一种基本技术。本文的目的是报导在硅、硅介质膜和铬膜气体等离子腐蚀时所观察到的一种新的腐蚀方法。众所周知,钻蚀现象是由于采用溶液的通常湿化学腐蚀方法的一种固有现象,因为腐蚀是以中心位于光致抗蚀剂的边缘按两维的正向推进。因此,当光致抗蚀剂掩模图形宽度和腐蚀的图形宽度分别定为 W_1和 W_2时,钻蚀的量△W=(W_1—W_2)/2在通常湿化学腐蚀方法的情况下总是正的。氟利昂—14气体等离子可以腐蚀硅和硅介质膜,同时腐蚀速率按下列次序:多晶 Corrosion of silicon and silicon dielectric films is a basic technique for forming fine patterns on the surface of silicon substrates. The purpose of this paper is to report on a new method of etching observed during plasma etching of silicon, silicon dielectric films and chromium film gases. It is well-known that undercutting is an inherent phenomenon of the usual wet chemical etching methods using solutions because the etching is proactively two-dimensionally centered on the edge of the photoresist. Therefore, the amount of undercut ΔW = (W_1 -W_2) / 2 is always positive in the case of the conventional wet chemical etching method when the pattern width of the photoresist mask and the width of the pattern to be etched are W_1 and W_2, respectively of. Freon -14 gas plasma can etch silicon and silicon dielectric films, while the corrosion rate in the following order: polycrystalline