论文部分内容阅读
利用等离子体增强化学气相沉积法制备了富硅氮化硅/富氮氮化硅多层膜,并以此氮化硅基多层膜作为有源层构建电致发光器件,在室温下观察到了较强的电致可见发光.在此基础上,研究多层膜结构中作为势垒层的富氮氮化硅层对器件电致发光性质的影响,实验结果表明通过改变势垒层的Si/N组分,调制其势垒高度,器件的电致发光效率可得到显著地提高.
A silicon-rich silicon nitride / nitrogen-rich silicon nitride multilayer film was prepared by plasma-enhanced chemical vapor deposition. Based on this silicon nitride-based multilayer film as an active layer, an electroluminescent device was fabricated and observed at room temperature Strong electroluminescence.On the basis of this study, the multi-layer film structure as a barrier layer of nitrogen-rich silicon nitride layer on the device electroluminescent properties of the experimental results show that by changing the barrier layer of Si / N component, modulation of the barrier height, the electroluminescence efficiency of the device can be significantly improved.