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(CdTe)_m(ZnTe)_n-ZnTe多量子阱是由(CdTe)_m(ZnTe)_n短周期超晶格限制在ZnTe势垒中组成的新结构。它可以提高CdTe/ZnTe异质生长的临界厚度。静压下的光致发光研究表明加压后(CdTe)_m(ZnTe)_n超晶格和ZnTe势垒层的光致发光峰分别以8.80和 9.47meV/kbar的速率向高能移动。利用这种静压下的带隙变化,实现了与514.5和488.0nm激发光的共振喇曼散射。观察到高达4阶的多声子共振喇曼散射。并发现与(CdTe)_m(ZnTe)_n超晶格共振时的类ZnTe LO声子模频率比与ZnTe热垒共振时的ZnTe LO声子频率低1.4cm~(-1)。反映了在(CdTe)_m(ZnTe)_n超晶格中LO声子的局域效应。
(CdTe) _m (ZnTe) _n-ZnTe MQW is a new structure limited by the (CdTe) _m (ZnTe) _n short-period superlattice in the ZnTe barrier. It can increase the critical thickness of heterogeneous growth of CdTe / ZnTe. Photoluminescence studies at static pressure show that the photoluminescence peaks of the pressed (CdTe) _m (ZnTe) _n superlattice and the ZnTe barrier layer move towards higher energies at rates of 8.80 and 9.47 meV / kbar, respectively. Resonance Raman scattering with 514.5 and 488.0 nm excitation light was achieved with this bandgap variation under static pressure. Up to 4th order polyphonic resonance Raman scattering was observed. It was found that the phonon modulus ratio of ZnTe LO phonon at the resonance with (CdTe) _m (ZnTe) _n superlattices was 1.4 cm -1 lower than that of ZnTe LO phonons at the resonance of ZnTe thermal barrier. It reflects the local effect of LO phonon in (CdTe) _m (ZnTe) _n superlattices.