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用金属蒸发真空弧离子源注入机将 Y离子注入硅 ,制备出特性良好的硅化物。用掠角沟道技术和透射电子显微镜分析了这种硅化物的结构。用束流密度为 2 5μA/ cm2的 Y注入硅可形成三层结构的硅化钇。硅化钇层的厚度大约为 60— 80 nm.其缺陷密度 Nd 和薄层电阻 Rs随束流密度的增加而下降。快速退火后 ,Nd和 Rs都明显下降。Rs从 54Ω/□下降到 1 4Ω/□。最小电阻率为 84μΩ·cm.这说明快速退火可以改善硅化钇的电特性。X射线衍射分析表明 YSi和 YSi2 硅化物已经形成。掠角沟道技术有益于研究薄层硅化物的原子深度分布和晶格缺陷密度分布
Using metal evaporation vacuum arc ion source implanter, Y ions were implanted into the silicon to prepare a silicide with good characteristics. The structure of this silicide was analyzed by sweep sweep channel and transmission electron microscopy. Three-layer structured yttrium silicide was formed by implanting silicon with Y beam current density of 25 μA / cm 2. The thickness of the yttrium silicide layer is about 60-80 nm, and its defect density Nd and sheet resistance Rs decrease with increasing beam densities. After rapid annealing, both Nd and Rs decreased significantly. Rs drops from 54Ω / □ to 14Ω / □. The minimum resistivity is 84 μΩ · cm, indicating that rapid annealing can improve the electrical properties of yttrium silicide. X-ray diffraction analysis shows that YSi and YSi2 silicides have been formed. Sweep-angle channel technology is useful for studying atomic depth distribution and lattice defect density distribution of thin-layer silicides