论文部分内容阅读
在已有的以无机锆盐为原料 ,用 Sol- Gel方法制备硅基 Pb(Zr0 .5 3 Ti0 .47) O3 (PZT)铁电薄膜的工艺基础上 ,成功地制备出 Pb Ti O3 / Pb(Zr0 .5 3 Ti0 .47O3 / Pb Ti O3 (PT/ PZT/ PT)夹心式新结构。由于采用了这种夹心式结构 ,使得 PZT铁电薄膜的退火温度由原来的 90 0℃降到了 70 0℃。通过实验检验了新结构的铁电和介电性能。发现夹心结构有助于提高 PZT薄膜的品质。
Based on the existing process of preparing the zirconium-based Pb (Zr0.53Ti0.47) O3 (PZT) ferroelectric thin film by using the inorganic zirconium salt as a raw material and by Sol-Gel method, PbTiO3 / Pb (Zr0.53 Ti0.47O3 / PbTiO3 (PT / PZT / PT) sandwich new structure. Due to the sandwich structure, the annealing temperature of the PZT ferroelectric thin film is reduced from 90 0 ℃ to 70 0 ° C. The ferroelectric and dielectric properties of the new structure were tested experimentally and the sandwich structure was found to improve the quality of the PZT film.