本文介绍用电子束在绝缘体结构上熔化并再结晶多晶硅层以形成单晶硅的方法。形成了低角度晶粒界面或大的平行晶粒的单晶硅膜,其结果类似于其它束和辐照热源工艺所获得的结果。然而,对电子束方法的研究远不如对其它加热源的研究彻底。本文还讨论了电子束相对其它热源的优缺点,并指出了目前的应用状况。 This article describes a method of melting and recrystallizing a polysilicon layer on an insulator structure with electron beams to form single-crystal silicon. Single crystal silicon films formed with low-angle grain boundaries or large parallel grains have similar results to those obtained with other beam and irradiation heat source processes. However, the study of electron beam methods is far less complete than the study of other heat sources. The paper also discusses the advantages and disadvantages of electron beam relative to other heat sources and points out the current application.