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采用１２ＭｅＶ电子束辐照效应将Ｐ＋ＮＮ＋普通整流二极管改制成高频整流二极管，与传统掺金工艺相比，少子寿命控制精确；ｔｒｒ和ＶＦ的一致性和重复性好；高温性能明显改善；产品合格率提高３０％以上，工艺简单易行。
Adopt 12MeV electron beam irradiation effect to transform P + NN + ordinary rectifier diode into high-frequency rectifier diode. Compared with the traditional gold-doped process, the life control of fewer children is accurate; the consistency and repeatability of trr and VF are good; the performance of high temperature is obviously improved; Rate increased by 30%, the process is simple and easy.