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The resonant Raman scattering by TO1 and TO2 was studied near E0 gap of liquid-phase-epitaxy Ga0.39Al0.81As and Ga0.29Al0.71As samples. In order to tune the energy gap of a semiconductor with respect to a fixed gas laser line, the resonant Raman scattering was performed by means of the variation of the energy gap with the temperature in the sample. According to the quasistatic approximation, the resonant profiles of one-phonon deformation potential scattering were calculated. It was discussed in the microscopic theory that the resonance maxima occured at an energy 1/2hvp higher than the gap energies. These were applied to interpret the experimental data. From these measurements, it was found that the direct energy gap Eg was 2.44eV for Ga0.29As0.71As and 2.31eV for Ga0.39Al0.61As at room temperature.
The resonant Raman scattering by TO1 and TO2 was studied near E0 gap of liquid-phase-epitaxy Ga0.39Al0.81As and Ga0.29Al0.71As samples. In order to tune the energy gap of a semiconductor with respect to a fixed gas laser line , the resonant Raman scattering was performed by means of the variation of the energy gap with the temperature in the sample. According to the quasistatic approximation, the resonant profiles of one-phonon deformation potential scattering were calculated. It was discussed in the microscopic theory that the resonance maxima occured at an energy 1 / 2hvp higher than the gap energies. These were applied to interpret the experimental data. From these measurements, it was found that the direct energy gap Eg was 2.44eV for Ga 0.29As 0.71As and 2.31eV for Ga 0.39 Al 0.61 As at room temperature.