论文部分内容阅读
探讨了HfO_2薄膜中负离子元素杂质破坏模型,并得出薄膜中的杂质主要来源于镀膜材料.用电子束蒸发方法沉积两种不同Cl元素含量的HfO_2薄膜,测定薄膜弱吸收和损伤阈值来验证负离子元素破坏模型.结果表明,随着Cl元素含量的增加薄膜的弱吸收增加损伤阈值减小.这主要是因为负离子元素在蒸发过程中形成挥发性的气源中心而产生缺陷,缺陷在激光辐照过程中又形成吸收中心.因此负离子元素的存在将加速薄膜的破坏.
The damage model of HfO_2 film was discussed and it was found that the impurities mainly originated from the coating.HfO_2 films with different contents of Cl were deposited by electron beam evaporation and the weak absorption and damage threshold were measured to verify the negative ions Element damage model.The results show that with the increase of Cl content, the damage threshold decreases with the increase of the weak absorption of the film, which is mainly due to the formation of a defect in the negative gas source during the evaporation process, In the process of forming absorption center, so the existence of negative ions will accelerate the destruction of the film.