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采用热丝化学气相沉积法制备了不同B2H6掺杂比例(B2H6/SiH4为2%~15%)的p型纳米晶硅薄膜,通过探索B2H6掺杂比例、晶化率、光学带隙和电学性能(电导率、载流子浓度、霍尔迁移率)之间的关系以及薄膜掺杂机理来研究B2H6掺杂比例对薄膜微结构和光电性能的影响。在掺杂比例为11%时成功获得了电导率为32 S/cm的高电导率硼掺杂nc-Si∶H薄膜。
The p-type nanocrystalline silicon films with different B2H6 doping ratio (B2H6 / SiH4 2% ~ 15%) were prepared by hot wire chemical vapor deposition. The effects of B2H6 doping ratio, crystallization rate, optical band gap and electrical properties (Conductivity, carrier concentration, Hall mobility) and the film doping mechanism to study the impact of B2H6 doping ratio on the film microstructure and optical properties. The high conductivity boron-doped nc-Si: H thin films with a conductivity of 32 S / cm were successfully obtained at a doping ratio of 11%.