高频线路和系统设计者目前在他们的技术领域中又有了一种新的重要手段。单片的砷化镓(GAs)数字集成电路已经出现,因此,有希望实现远超过目前以硅为基础集成电路的数千兆赫存储单元和更高的数据处理速度。为了能实用于未来的系统,这种新电路还必须进一步深入研究其尺寸,重量,最后还有高频电子设备的成本。在这个过程中,将大大提高广泛用于商用和军用的设备性能。制做砷化镓电路已经出现了两种基本办法。较早的办法是利用耿氏效应,即利用砷化镓的可触发自振特性,实现阀门开关元件,这 High-frequency line and system designers now have a new and important tool in their technology. Monolithic GaAs digital integrated circuits have emerged and, as a result, are expected to achieve far beyond the current gigahertz memory cells based on silicon-based integrated circuits and higher data processing speeds. In order to be practical in future systems, this new circuit must further investigate its size, weight, and finally the cost of high-frequency electronics. In this process, equipment performance that is widely used in commercial and military applications will be greatly enhanced. There are two basic approaches to making gallium arsenide circuits. The earlier approach was to use the Gunn effect, which exploits the triggerable nature of gallium arsenide to achieve valve switching elements, which