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Lin Douliang等人把变分累积开展 ( VCE)方法用于薄膜 ,计算了各种结构的磁性薄膜的临界温度[1 ,2 ] .本文是文献 [1 ]的继续 ,计算了 L层磁性薄膜的临界指数 γ( L)与 β( L) ,计算结果与文献 [3～ 5]的实验结果符合 .对于 L=1 (相当于 2维 )这一特例 ,我们的计算结果与精确解符合得相当好 .
Lin Douliang et al. Used the VCE method for the thin film and calculated the critical temperature of the magnetic thin films of various structures [1, 2]. This paper is the continuation of [1] The critical values of γ (L) and β (L) are in good agreement with the experimental results in [3] and [5], and for the special case of L = 1 it is good .