针对电容式MEMS微加速度计出现的输出值漂移问题,研究了后退火处理对封装好的电容式微加速度计的影响,选取的退火温度为110℃,退火时间为192 h。对退火后微加速度计的上电时刻零位值和上电1 h内1 g状态下的输出值进行了测量。通过对测试结果进行分析得到:退火实验可以筛选出随贮存时间零位漂移较小的样品;微加速度计输出值零位漂移的主要原因可能是芯片受F元素的影响;微加速度计输出值上电漂移的主要原因可能是芯片受O元素的影响。 Aiming at the problem of output value drift of capacitive MEMS micro-accelerometer, the influence of post-annealing on the encapsulated capacitive micro-accelerometer was studied. The annealing temperature was 110 ℃ and the annealing time was 192 h. After annealing, the micro accelerometer power-on time zero value and 1 h power on 1 g state of the output value was measured. By analyzing the test results, it can be concluded that the annealing experiment can filter out the samples with small zero drift as the storage time. The main reason for the zero drift of the micro accelerometer output may be that the chip is affected by the F element. The micro accelerometer output value The main reason for the electric drift may be that the chip is affected by the O element.