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We have studied the conduction mechanism of a series of a-Si:H/a-SiNx:H multi-layers samples which have an identical sublayer thickness and periodic numbers, except the ratio of N/Si in a-SiNx:H sublayers. It is shown that the temperature characteristic of conductivity of these samples has a kink point in the range of 120-140℃. The kink temperature and the acttivation energy of conductivity are related to the N/Si ratio in the a-SiNx:H sublayers. We recognized preliminarily that the mechanism above and below the kink temperature could be the bulk or the interfacial conduction in a-Si:H well layers.
We have studied the conduction mechanism of a series of a-Si: H / a-SiNx: H multi-layers samples which have an identical sublayer thickness and periodic numbers, except the ratio of N / Si in a-SiNx: H sublayers. The kink temperature and the acttivation energy of conductivity are related to the N / Si ratio in the a-SiNx: H sublayers We recognized preliminarily that the mechanism above and below the kink temperature could be the bulk or the interfacial conduction in a-Si: H well layers.