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本文研究了 10 50～ 12 50℃温度下干氧和湿氧中多晶SiC/Si材料的氧化规律 ,讨论了氧化层厚度与时间、温度、气氛的关系 ,用Auger电子能谱仪对薄膜成分进行了分析。
In this paper, the oxidation rules of polycrystalline SiC / Si materials in dry and wet oxygen at 10 50 ~ 12 50 ℃ were studied. The relationship between the oxide thickness and time, temperature and atmosphere was discussed. The Auger electron spectrometer Analyzed.