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本文在背景Ar气压力为8×104Pa、温度为1800~2000℃的条件下,对升华法生长S iC单晶的籽晶进行了原位退火处理,利用原子力显微镜和光学显微镜对退火后的6H-S iC晶片表面进行了观察,研究了退火温度和时间对晶片表面的影响。发现经过退火处理后的籽晶表面存在规则的生长台阶,有助于侧面生长模式的发展,进一步有助于台阶流生长模式的发展。通过对籽晶的退火处理,降低了螺旋生长中心的密度,从而减少多型夹杂、小角度晶界和微管等缺陷的出现,提高了晶体质量。
In this paper, under the conditions of Ar gas pressure of 8 × 104 Pa and temperature of 1800 ~ 2000 ℃, the seeds of sub-grown SiC single crystal were annealed in situ. The microstructure of the annealed 6H -SiC wafer surface was observed to study the annealing temperature and time on the wafer surface. It is found that there is a regular growth step on the surface of the seed after annealing, which is helpful for the development of the lateral growth pattern and further contributes to the development of the step flow growth pattern. By annealing the seed crystal, the density of the spiral growth center is reduced, thereby reducing the occurrence of defects such as multi-type inclusions, small-angle grain boundaries and microtubes, thereby improving the crystal quality.