日本日立制作所于本月九日宣布,该所与日本九洲大学的小西进教授合作,成功地完成了新布洛赫线存储器的基本运行实验。这是一种大容量外存用的非易失性存储器,可存储信息1000兆位/cm~2,比现有硬磁盘的存储密度高2个数量级。日立和小西教授在世界上首次验证存该存储的读出、写入及传输功能,开辟了用手掌那么大的尺寸实现大大超过硬磁盘的超高密度存储器之路。打算在五年以后达到实用阶段。布洛赫线存储器是小西教授在一九八一年提出的一种新概念的磁存储器,通过 Japan’s Hitachi Ltd. announced on the 9th of this month that it has successfully completed the basic running experiments of the new Bloch line memory in cooperation with Professor Xiaoxi Jin of Japan’s Jiuzhou University. This is a non-volatile memory with a large capacity for storing external memory of 1,000 Mbit / cm 2, which is two orders of magnitude greater than the storage density of existing hard disks. Hitachi and Katsumi testify for the first time in the world the ability to read, write and transfer the memory, opening the way to ultra-high-density memory that surpasses hard disks at the size of the palm of their hand. It is planned to reach the practical stage after five years. Bloch Line Memory is a new concept of magnetic memory proposed by Professor Nishio in 1981, adopted by