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采用磁控溅射法在Mo衬底上制备了Ru薄膜,利用真空退火炉、EDS、XRD,台阶仪及纳米划痕仪等设备研究了不同退火温度对Ru薄膜化学成分、相结构、残余应力及膜基结合力的影响。结果表明,不同退火温度处理下的Ru薄膜呈六方Ru结构,具有(002)择优取向,当退火温度为600℃时,薄膜出现氧化相。退火处理能够改善薄膜结晶程度。随退火温度的升高,薄膜残余应力逐渐降低,膜基结合力先升高后降低,当退火温度为300℃时,膜基结合力最高,约为17.6 N。
Ru thin films were deposited on Mo substrate by magnetron sputtering. The effects of annealing temperature on the chemical composition, phase structure and residual stress of Ru thin films were studied by using vacuum annealing furnace, EDS, XRD, step and nano-scratch tester. And the impact of film-based bonding. The results show that the Ru films are hexagonal Ru structure with (002) preferred orientation at different anneal temperatures. When the annealing temperature is 600 ℃, the oxide films appear. Annealing treatment can improve the degree of crystallization of the film. With the increase of annealing temperature, the film residual stress gradually decreased, the film-based bond strength first increased and then decreased. When the annealing temperature was 300 ℃, the film-based bond strength was the highest, about 17.6 N.