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在有效质量近似下,用变分法研究了闪锌矿GaN/Al_xGa_(1-x)N单量子点中的类氢杂质态.结果表明量子点中的杂质位置和量子点结构参数(量子点高度H、半径R及Al含量x)对施主束缚能有很大的影响.当杂质位于量子点中心时,施主束缚能E_b有最大值.此外,施主束缚能E_b随着量子点高度H(半径R)的增大而减小,随着量子点中Al含量x的增大而增大.
In the approximation of the effective mass, the impurity-like states in GaN / Al_xGa_ (1-x) N single quantum dots of sphalerite were investigated by the variational method. The results show that the impurity sites in QDs and the quantum dot structure parameters Height H, radius R and Al content x) have a great influence on the donor binding energy. When the impurity is located at the center of the quantum dot, the donor binding energy E_b has a maximum. In addition, the donor binding energy E_b varies with the quantum dot height H R) decreases with increasing, with the increase of quantum dot x content increases.